Wendland Beezhold, Ph.D Visiting Professor |
Education Background |  |
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Contact Information: 785 S. 8th
Ave. Campus Box 8106 Pocatello, ID 83209 Phone: (208) 282-2626
FAX: (208) 282-4649 e-mail: beezhold@physics.isu.edu
Office: PS 117A |
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- Ph.D. (1969), Physics,
University of Washington
- M.S. (1963), Physics, University of Washington
- B.S.
(1961), Physics, University of Washington
- Physics Major (1957-1959), UCLA
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| 2000 - present: Visiting Professor, Idaho State University 1998
- 2000: Senior Scientist, Center for Applied Physics, Sandia National Laboratories 1996
- 1997: Deputy director, Center for Applied Physics, Sandia national Laboratories 1993
- 1996: Proram manager, Sandia National Laboratories 1990 - 1992: Senior
Department Manager, Sandia National Laboratories 1977 - 1990: Division Supervisor,
Sandia National Laboratories 1976 - 1977: Deputy Director and then Director,
MHD and Energy Research Program, Montana State University 1970 - 1975: Member
of the Technical Staff, Sandia National Laboratories |
| | | Selected
Publications | |
These publications are relevant to present work (total list at ~75 publications).
- P.E. Dodd, G. Vizkelethy, W. Beezhold, D.S. Walsh, M.R. Shaneyfelt, J.R. Schwank,
and B.L. Doyle, "Device-level studies of dose-rate response using numerical
simulations and transient radiation microscopy," presented at the 19th Hardened
Electronics and Radiation Technology Conference, San Antonion, TX, March
- S.N.
Renfrow, W. Beezhold, PE. Dodd, D.S. Walsh, and B.L. Doyle, "Device level
prompt photocurrent radiation microscopy using Sandia's ion microprobe facility,"
presented at the 18th Hardened Electronics and Radiation Technology Conference,
Anaheim, CA, March 21-25, 2000, and accepted for publication in the J. Rad.
Eff. Res. Engnrg..
- W.P. Ballard, E.F. Hartman, W. Beezhold, D.E. Beutler,
D. Campbell, R.E. Craven, T.B. Parson, N.E. Counts, D.C. Evans, L.D. Posey, W.
Seidler, B. Passenheim, B. Kitterer, R. Whittaker, W. Hardwick, T.A. Stringer,
M. Iverson, "TREE and IEMP Measurements on an Active Power Circuit Using
Various Hardening Techniques and Bremsstrahlung Spectra," 1989 HEART Conference,
Journal of Radiation Effects: Research and Engineering (1989).
- D.
E. Beutler, D.M. Fleetwood, W. Beezhold, D. Knott, L.J. Lorence, Jr., and B.L.
Draper, "Variations in Semiconductor Device Response in a Medium-Energy X-Ray
Dose-Enhancing Environment," IEEE Transations on Nculear Science, Vol. NS-34,
No. 6, december 1987.
- W. Beezhold, L.J. Lorence, R.R. Hart, A.J. Smith,
"Acomparison of Measured Dose Enhancement Effects in LiF TLDS With 2-D Monte
Carlo Predictions," IEEE Transactions on Nuclear Science, Vol. NS-33, No.
6, December 1986.
- T.W.L. Sanford, J.A. Halblieb, W. Beezhold, L.J. Lorence,
"An Experimental Verification of Non-equilibrated Bremsstrahlung Dosimetry
Predictions for 0.75 MeV Electrons," IEEE Transactions on Nuclear Science,
Vol. NS-33, No. 6, December 1986.
- W. Beezhold, J. Benson, F.J. Agee, C.M.
Gilman, V. Kenyon, and M. Montgomery, "Recent Advances in US DoD/DOE Laboratory
Simulation Capabilities," Proceedings of the 1985 Hardened Electronics and
Radiation Technology (HEART) Conference, Monterey, CA, July, 1985.
- L.D.
Posey, T.F. Wrobel, D.C. Evans, W. Beezhold, J.G. Kelly, C.J., macCallum, F.N.
Coppage, T.F. Leura, "MOS-Transistor Rdiation Detectors and X-ray Dose-Enhancement
Effects," IEEE Transactions on Nuclear Science, Vol. NS-32, No. 6, December
1985.
- W. Beezhold, "Proton-Induced Characteristic X-ray Analysis
of Na and Cl Impurity Atoms in SiO2 Tin Films," Appl. Phys. Lett.
24, 540 (1974).
- W. Beezhold and K.L. Brower, "Electron Paramagnetic
Resonance of the Lattice Damage in Boron-Implanted Intrinsic silicon," IEEE
Trans Nucl. Sci. NS-20, 209 (Dec. 1973).
- W. Beezhold and E. EerNissen,
"Ion Implantation into Insulators: Charge Removal Techniques Using Ion Induced
Characteristic X-rays," Appl. Phys. Lett. 21, 592 (1972).
- W. Beezhold
and K.L. Brower, "Electron Paramagnetic Resonance of the Lattice Damage in
Oxygen-Implanted Silicon," App. Phys. 43, 3499 (1972).
- W. Beezhold,
J.A. Borders and S.T. Picraux, "Formation of SiC in Silicon by Ion Emplantation,"
Phys. Lett. 18, 509-511 (1971).
- W. Beezhold and E.A. Uehling, "Determination
of the electric-Field-Gradient Tensor at the Arsenic Site in KH2AsO4
by Proton Relaxatio Measurements," Physics Rev. 175, No. 2, 624, November
1968.
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| Synergistic
Activities | |
Dr. Beezhold has experience in developing pulsed-power accelerators and has
recently worked at the Idaho Accelerator Center (IAC) and at Sandia National Laboratories
in the areas of: - using accelerators to expose microelectronic devices
to radiation,
- modeling and simulation of radiation effects in microelectronic
devices and circuits,
- body-tie investigations of SO1 microelectronic devices
using an ion-beam microprobe.
He has served on several DOE national
laboratory committees and is the past chairperson of the National Hardened Electronics
and Radiation Technology (HEART) Conference Steering Committee. |
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