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Wendland Beezhold, Ph.D
 
    
 
Wendland Beezhold, Ph.D
Visiting Professor
Education
Background

Contact Information:

785 S. 8th Ave.
Campus Box 8106
Pocatello, ID 83209
Phone: (208) 282-2626
FAX: (208) 282-4649
e-mail: beezhold@physics.isu.edu
Office: PS 117A

Education
  • Ph.D. (1969), Physics, University of Washington
  • M.S. (1963), Physics, University of Washington
  • B.S. (1961), Physics, University of Washington
  • Physics Major (1957-1959), UCLA

Positions

2000 - present: Visiting Professor, Idaho State University

1998 - 2000: Senior Scientist, Center for Applied Physics, Sandia National Laboratories

1996 - 1997: Deputy director, Center for Applied Physics, Sandia national Laboratories

1993 - 1996: Proram manager, Sandia National Laboratories

1990 - 1992: Senior Department Manager, Sandia National Laboratories

1977 - 1990: Division Supervisor, Sandia National Laboratories

1976 - 1977: Deputy Director and then Director, MHD and Energy Research Program, Montana State University

1970 - 1975: Member of the Technical Staff, Sandia National Laboratories


Selected Publications

These publications are relevant to present work (total list at ~75 publications).

  • P.E. Dodd, G. Vizkelethy, W. Beezhold, D.S. Walsh, M.R. Shaneyfelt, J.R. Schwank, and B.L. Doyle, "Device-level studies of dose-rate response using numerical simulations and transient radiation microscopy," presented at the 19th Hardened Electronics and Radiation Technology Conference, San Antonion, TX, March
  • S.N. Renfrow, W. Beezhold, PE. Dodd, D.S. Walsh, and B.L. Doyle, "Device level prompt photocurrent radiation microscopy using Sandia's ion microprobe facility," presented at the 18th Hardened Electronics and Radiation Technology Conference, Anaheim, CA, March 21-25, 2000, and accepted for publication in the J. Rad. Eff. Res. Engnrg..
  • W.P. Ballard, E.F. Hartman, W. Beezhold, D.E. Beutler, D. Campbell, R.E. Craven, T.B. Parson, N.E. Counts, D.C. Evans, L.D. Posey, W. Seidler, B. Passenheim, B. Kitterer, R. Whittaker, W. Hardwick, T.A. Stringer, M. Iverson, "TREE and IEMP Measurements on an Active Power Circuit Using Various Hardening Techniques and Bremsstrahlung Spectra," 1989 HEART Conference, Journal of Radiation Effects: Research and Engineering (1989).
  • D. E. Beutler, D.M. Fleetwood, W. Beezhold, D. Knott, L.J. Lorence, Jr., and B.L. Draper, "Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment," IEEE Transations on Nculear Science, Vol. NS-34, No. 6, december 1987.
  • W. Beezhold, L.J. Lorence, R.R. Hart, A.J. Smith, "Acomparison of Measured Dose Enhancement Effects in LiF TLDS With 2-D Monte Carlo Predictions," IEEE Transactions on Nuclear Science, Vol. NS-33, No. 6, December 1986.
  • T.W.L. Sanford, J.A. Halblieb, W. Beezhold, L.J. Lorence, "An Experimental Verification of Non-equilibrated Bremsstrahlung Dosimetry Predictions for 0.75 MeV Electrons," IEEE Transactions on Nuclear Science, Vol. NS-33, No. 6, December 1986.
  • W. Beezhold, J. Benson, F.J. Agee, C.M. Gilman, V. Kenyon, and M. Montgomery, "Recent Advances in US DoD/DOE Laboratory Simulation Capabilities," Proceedings of the 1985 Hardened Electronics and Radiation Technology (HEART) Conference, Monterey, CA, July, 1985.
  • L.D. Posey, T.F. Wrobel, D.C. Evans, W. Beezhold, J.G. Kelly, C.J., macCallum, F.N. Coppage, T.F. Leura, "MOS-Transistor Rdiation Detectors and X-ray Dose-Enhancement Effects," IEEE Transactions on Nuclear Science, Vol. NS-32, No. 6, December 1985.
  • W. Beezhold, "Proton-Induced Characteristic X-ray Analysis of Na and Cl Impurity Atoms in SiO2 Tin Films," Appl. Phys. Lett. 24, 540 (1974).
  • W. Beezhold and K.L. Brower, "Electron Paramagnetic Resonance of the Lattice Damage in Boron-Implanted Intrinsic silicon," IEEE Trans Nucl. Sci. NS-20, 209 (Dec. 1973).
  • W. Beezhold and E. EerNissen, "Ion Implantation into Insulators: Charge Removal Techniques Using Ion Induced Characteristic X-rays," Appl. Phys. Lett. 21, 592 (1972).
  • W. Beezhold and K.L. Brower, "Electron Paramagnetic Resonance of the Lattice Damage in Oxygen-Implanted Silicon," App. Phys. 43, 3499 (1972).
  • W. Beezhold, J.A. Borders and S.T. Picraux, "Formation of SiC in Silicon by Ion Emplantation," Phys. Lett. 18, 509-511 (1971).
  • W. Beezhold and E.A. Uehling, "Determination of the electric-Field-Gradient Tensor at the Arsenic Site in KH2AsO4 by Proton Relaxatio Measurements," Physics Rev. 175, No. 2, 624, November 1968.
 
Synergistic Activities

Dr. Beezhold has experience in developing pulsed-power accelerators and has recently worked at the Idaho Accelerator Center (IAC) and at Sandia National Laboratories in the areas of:

  • using accelerators to expose microelectronic devices to radiation,
  • modeling and simulation of radiation effects in microelectronic devices and circuits,
  • body-tie investigations of SO1 microelectronic devices using an ion-beam microprobe.

He has served on several DOE national laboratory committees and is the past chairperson of the National Hardened Electronics and Radiation Technology (HEART) Conference Steering Committee.

 
 
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