Restraining the Laws of Nature with a Layer of Atoms
Dr. R. J. Smith, Physics Department, Montana State University
The technique of MeV ion backscattering and channeling has been used
to study the interface structure and stoichiometry for thin transition metal
films deposited on Al single crystal surfaces. Analysis of the backscattering
data is based on the concepts of shadowing and the well-known theory of Rutherford
scattering. First, we consider the growth of ordered Ti films on Al
single crystal surfaces, and ordered alloy formation at the Ag-Al interface.
We then discuss measurements for alloy formation at the Ni-Al(110) interface,
along with results from Monte Carlo simulations of the interface evolution.
Finally, an approach is described to stabilize metal-metal interfaces using
an extremely thin metallic interlayer. Specifically, a single layer of Ti
atoms deposited at the Fe-Al interface, a system well known for considerable
intermixing at room temperature, is shown to prevent interdiffusion, resulting
in the ordered growth of Fe films on the Al(100) surface. The resulting
structure is stable up to about 200 oC.
For related information: http://www.physics.montana.edu/Ionbeams/ionbeams.html