Lightly-doped GaAs: A decade of spin lifetimes and spin resonance
Dr. John Colton
Department of Physics and Astronomy
Brigham young University

The last ten years have been ones of incredible growth and excitement for studying the spin properties of electrons in semiconductors. GaAs has in many respects played a dominant role. In this talk, I will discuss my work on lightly-doped GaAs (n = 3E15 cm-3 and lower): experiments measuring electron spin lifetimes and performing electron and nuclear spin resonance. I will also comment on the historical development of the field, and (as I see it) what the major developments have been and will continue to be.